AR
C
HIVE INF
O
RMATI
O
N
ARCHIVE INFORMATION
8
RF Device Data
Freescale Semiconductor
MRF5S19130HR3 MRF5S19130HSR3
PACKAGE DIMENSIONS
CASE 465B-03
ISSUE D
NI-880
MRF5S19130HR3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M?1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4. DELETED
DIM MIN MAX MIN MAX
MILLIMETERS
INCHES
A
1.335 1.345 33.91 34.16
B
0.535 0.545 13.6 13.8
C
0.147 0.200 3.73 5.08
D
0.495 0.505 12.57 12.83
E
0.035 0.045 0.89 1.14
F
0.003 0.006 0.08 0.15
G
1.100 BSC 27.94 BSC
H
0.057 0.067 1.45 1.70
K
0.170 0.210 4.32 5.33
N
0.871 0.889 19.30 22.60
Q
.118 .138 3.00 3.51
R
0.515 0.525 13.10 13.30
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
1
3
2
D
G
K
C
E
H
F
Q
2X
bbb BT
A
M
M
M
bbb BT
A
M
M
M
B
B
(FLANGE)
T
SEATING
PLANE
ccc BT
A
M
M
M
bbb BT
A
M
M
M
AA
(FLANGE)
N
(LID)
M
(INSULATOR)
S
(INSULATOR)
aaa BT
A
M
M
M
R
(LID)
ccc BT
A
M
M
M
S
0.515 0.525 13.10 13.30
M
0.872 0.888 22.15 22.55
aaa
0.007 REF 0.178 REF
bbb
0.010 REF 0.254 REF
ccc
0.015 REF 0.381 REF
CASE 465C-02
ISSUE D
NI-880S
MRF5S19130HSR3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M?1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
DIM MIN MAX MIN MAX
MILLIMETERS
INCHES
A
0.905 0.915 22.99 23.24
B
0.535 0.545 13.60 13.80
C
0.147 0.200 3.73 5.08
D
0.495 0.505 12.57 12.83
E
0.035 0.045 0.89 1.14
F
0.003 0.006 0.08 0.15
H
0.057 0.067 1.45 1.70
K
0.170 0.210 4.32 5.33
N
0.871 0.889 19.30 22.60
R
0.515 0.525 13.10 13.30
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
1
T
SEATINGPLANE
AA
2
D
K
C
E
H
F
bbb BT
A
M
M
M
B
B
(FLANGE)
ccc BT
A
M
M
M
bbb BT
A
M
M
M
(FLANGE)
N
(LID)
M
(INSULATOR)
ccc BT
A
M
M
M
aaa BT
A
M
M
M
R
(LID)
S
(INSULATOR)
S
0.515 0.525 13.10 13.30
M
0.872 0.888 22.15 22.55
bbb
0.010 REF 0.254 REF
ccc
0.015 REF 0.381 REF
aaa
0.007 REF 0.178 REF
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相关代理商/技术参数
MRF5S19130R3 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S19130SR3 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S19150 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF Power Field Effect Transistors
MRF5S19150H 制造商:Freescale Semiconductor 功能描述:L BAND, SI, N-CHANNEL, RF POWER, MOSFET
MRF5S19150HR3 功能描述:射频MOSFET电源晶体管 HV5 32W N/CDMA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF5S19150HR3_08 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF5S19150HR5 功能描述:射频MOSFET电源晶体管 HV5 32W N/CDMA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF5S19150HSR3 功能描述:MOSFET RF N-CHAN 28V 32W NI-880S RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3(TO-236) 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR